5分钟轻松选对产品方案
17715390137
18101240246
18914047343
产品照片：
A high-quality epitaxial monolayer graphene is fabricated on Si-face of semi-insulating, transparent {0001} 4H-SiC substrates via solid-state graphitization. During the sublimation process, a specific buffer layer that has a distorted graphene-like structure forms between the graphene film and the underlying SiC substrate. Both the substrate and the buffer layer influence the electronic properties, resulting in intrinsic n-doping of the epitaxially grown monolayer graphene.
Excellent carrier mobility
Controlled growth of Graphene layers
Better purity of the samples
Potential scalable method for graphene fabrication
样品参数：
衬底参数：
样品表征：
Raman:
透过：
霍尔效应测试：
| 温馨提示：北京北科新材科技有限供应产品仅用于科研，不能用于人体。网站图片源自互联网，图片仅供参考，请以实物为准，如有侵权请联系我们立即删除。产品参数仅供参考，请以实际值为准！ |
|
|
版权所有 © 2019 北京北科新材科技有限公司
All rights reserved.京ICP备16054715-2号 |
