Product name: CVD method Single layer graphene film on silicon oxide substrate

Product Nature

Film color: colorless and transparent

Product brand: JCGRFSIO

Square resistance: single layer A 300-600 Ω/□ single layer B 700-1500 Ω/□ few layers 500-1200Ω/□

The number of layers of graphene film is single layer or few layers (less than 10 layers). The film has high integrity, high single-layer coverage, good electrical conductivity, and a mobility of ~6000 cm2/vs.

Graphene is transferred to silicon oxide wafers, customers can also provide silicon oxide wafers by themselves, we transfer.


Silicon oxide parameters:

Type: P-type heavily doped (R: 3×10-3Ωcm)

Thickness: 525±20μm

Oxide layer thickness: 300nm

The maximum can be 7cm*7cm (can be internally connected with 4 inch silicon oxide substrate or full rotation)

This product should be sealed and stored in a dry environment at a temperature below 35°C. It is strictly prohibited to contact with volatile substances and pollution sources. Keep away from fire.

Remarks: A-level single-layer coverage is greater than 97%, B-level single-layer coverage is greater than 85%, and the thickness of few-layer graphene is less than 10 layers, and customized services can be provided