Performance parameters:

• 

• Product number	GaN-FS-A-U/N/SI-S
  Size	（5.0~10.0）× 10.0 mm2
  	（5.0~10.0）× 20.0mm2
  Thickness	350±25μm
  Planes	（1120）
  Chamfer angle	-1°±0.2°
  TTV	≤10μm
  Curvature	≤10μm
  Conductivity type Resistivity（300 K）	N-type  < 0.1Ω·cm
  	N-type < 0.05Ω·cm
  	Semi-Insulating > 106Ω·cm
  Dislocation density	From 1x105 to 3x106cm-2
  Effective area	>90%
  Polished	Front Surface：Ra＜0.2 nm（polished）;
  	Back Surface：1-3nm（fine ground）; option：<0.2nm（polished）
  package	Packaged in a class 100 clean room environment, in single container,under a nitrogen atmosphere.