Performance parameters:

• 

• Product number	GaN-T-C-P-C50
  Size	Ф50.8 ± 0.1 mm
  Thickness	4.5±0.5 μm
  Crystal orientation	C-plane(0001) ± 0.5°
  Conductivity type	P-type(Mg-doped)
  Resistivity (300 K)	~10Ω·cm
  Carrier concentration	>  6x1016cm-3
  Mobility	~ 10cm2/V•s
  Dislocation density	Less than 5x108cm-2(estimated by FWHMs of XRD)
  Substrate structure	GaN on sapphire (standard :SSP option:DSP)
  Effective area	>90%
  package	Packaged in a class 100 clean room environment, in cassette of 25pcs or single container , under a nitrogen atmosphere.