产品:AgInP2Se6 crystal
Detailed
	
	
Material name: AgInP2Se6
Property classification: topological materials, semiconductors, infrared materials, nonlinear materials, ferroelectric materials
Band gap: 0.622 eV
Synthesis method: CVT
Degree of difficulty of peeling: easy
Precautions for storage: The crystal is stable and does not require special storage
references:
A. Dziaugys, J. Banys, J. Macutkevic & Ju. Vysochanskii (2009) Dielectric Properties of New AgInP2Se6 Crystals,Ferroelectrics, 391:1, 151-157, DOI: 10.1080/00150190903004718
Material structure:

Band structure

EDS energy spectrum qualitative test element composition

High crystallinity XRD
	
 
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| Item ID | Info | 
| BK2021051304-01 | CAS: ID:BK2021051304 Pack:>10平方毫米 Parameter: Stock:100 Make up: Price:$390  | 
    
| BK2021051304-02 | CAS: ID:BK2021051304 Pack:>25平方毫米 Parameter: Stock:100 Make up: Price:$640  | 
    
| BK2021051304-03 | CAS: ID:BK2021051304 Pack:>100平方毫米 Parameter: Stock:100 Make up: Price:$1390  | 
    
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