Two-dimensional material micro-nano processing - in situ testing Two-dimensional material micro-nano processing - in situ testing> FET devices

产品:Mechanical lift-off of HfS2 FET devices

Detailed

Device structure: Gold electrode/HfS2/300nmSiO2/Si back-gate FET


HfS2, few layers (~3 layers, ~5 layers), multi-layer ~10 layers


Warm tip: the products supplied by Beijing Beike Xincai Technology Co., Ltd. are only used for scientific research, not for human body


Item ID Info
BK2022062001-01 CAS：
ID：BK2022062001
Pack：一片装
Parameter：少层HfS2 FET
Stock：100
Make up：
Price：$750
BK2022062001-02 CAS：
ID：BK2022062001
Pack：一片装
Parameter：多层HfS2 FET
Stock：100
Make up：
Price：$750
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