Two-dimensional material micro-nano processing - in situ testing Two-dimensional material micro-nano processing - in situ testing> FET devices

产品:Mechanical lift-off WS2 FET, back gate WS2 FET

Detailed

Device structure: Gold electrode/WS2/300nmSiO2/Si back gate FET


WS2, single layer, few layers (~3 layers, ~5 layers), multi-layer ~10 layers


Warm tip: the products supplied by Beijing Beike Xincai Technology Co., Ltd. are only used for scientific research, not for human body


Item ID Info
BK2022062002-01 CAS：
ID：BK2022062002
Pack：1片装
Parameter：单层WS2 FET
Stock：100
Make up：
Price：$750
BK2022062002-02 CAS：
ID：BK2022062002
Pack：1片装
Parameter：少层WS2 FET
Stock：100
Make up：
Price：$750
BK2022062002-03 CAS：
ID：BK2022062002
Pack：1片装
Parameter：多层WS2 FET
Stock：100
Make up：
Price：$750
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