Two-dimensional material micro-nano processing - in situ testing Two-dimensional material micro-nano processing - in situ testing> FET devices

产品:ReSe2 FET Back-gate FET

Detailed

Device structure: Gold electrode/ReSe2/300nmSiO2/Si back gate FET


ReSe2, few layers (~3 layers, ~5 layers), multiple layers ~10 layers


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Warm tip: the products supplied by Beijing Beike Xincai Technology Co., Ltd. are only used for scientific research, not for human body


Item ID Info
BK202206203 CAS：
ID：BK202206203
Pack：一片装
Parameter：
Stock：100
Make up：
Price：$750
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