产品:ReS2 Mechanically Stripped FET Rhenium Disulfide FET
Detailed
| 
										 
														 Structure: back gate FET, channel width 5um 
														  | 
								
| Warm tip: the products supplied by Beijing Beike Xincai Technology Co., Ltd. are only used for scientific research, not for human body | 
| Item ID | Info | 
| BK2022062004-01 | CAS: ID:BK2022062004 Pack:1片装 Parameter:少层 Stock:100 Make up: Price:$750  | 
    
| BK2022062004-02 | CAS: ID:BK2022062004 Pack:1片装 Parameter:多层 Stock:100 Make up: Price:$750  | 
    
- Previous: ReSe2 FET Back-gate FE
 - Next: Graphene FET (Mechanic
 

 
  
  Two-dimensional material micro-nano processing - in situ testing  
  






