Two-dimensional material micro-nano processing - in situ testing Two-dimensional material micro-nano processing - in situ testing> Micro and nano devices

产品:MoSe2 FET array, CVD MoSe2 FET array

Detailed

Back gate device structure: gold electrode array/CVD monolayer MoSe2 array/300nm SiO2/Si



1) Device type 1, 10*10 or 15*15 FET array, 5um channel, 300nm silicon oxide silicon substrate, back gate structure


Warm tip: the products supplied by Beijing Beike Xincai Technology Co., Ltd. are only used for scientific research, not for human body


Item ID Info
BK2022062007 CAS：
ID：BK2022062007
Pack：一片装
Parameter：
Stock：100
Make up：
Price：$2062
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