Two-dimensional material micro-nano processing - in situ testing Two-dimensional material micro-nano processing - in situ testing> FET devices

产品:MoSe2 FET, Molybdenum Diselenide Transistor

Detailed

Back-gate device structure: gold electrode/CVD monolayer MoSe2 (or mechanically exfoliated monolayer MoSe2)/300nm SiO2/Si




1) Device type 1, CVD triangular MoSe2 monolayer single crystal, 5um channel, 300nm silicon oxide silicon wafer substrate, back gate structure





Warm tip: the products supplied by Beijing Beike Xincai Technology Co., Ltd. are only used for scientific research, not for human body


Item ID Info
BK2022062008 CAS：
ID：BK2022062008
Pack：一片装
Parameter：
Stock：100
Make up：
Price：$562
return
Copyright © beijing beike new material Technology Co., Ltd 京ICP备16054715-2号