Two-dimensional material micro-nano processing - in situ testing Two-dimensional material micro-nano processing - in situ testing> FET devices

产品:MoS2 FET, Molybdenum Disulfide Transistor, Monolayer Molybdenum Disulfide Transistor

Detailed

Device structure: conductive silicon wafer/300nm silicon oxide layer/triangular MoS2 or hand-tear single-layer MoS2/Au+Cr+Au electrode


Sample example

1) Mechanical lift-off of single-layer MoS2 back-gate FET (single-layer, 5um wide channel, 300nm silicon oxide substrate)


2) Mechanical lift-off few-layer MoS2 back-gate FET (~3 layers, 5um wide channel, 300nm silicon oxide substrate)


3) Mechanical lift-off of multilayer MoS2 back-gate FET (~5 layers, 5um wide channel, 300nm silicon oxide substrate)


4) CVD triangular MoS2 single crystal, back gate FET (single layer, 5um wide channel, 300nm silicon oxide wafer)


器件结构：   导电硅片/300nm 氧化硅层/三角MoS2 或者手撕单层MoS2/Au+Cr+Au电极











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Item ID Info
BK2022062009 CAS：
ID：BK2022062009
Pack：一片装
Parameter：
Stock：100
Make up：
Price：$562
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