The research background

Transition metal sulfide compounds (TMDCs) have attracted much attention for their potential applications in ultra-thin optoelectronic devices due to their layered properties providing adjustable and thick-dependent band-gap energy and self-passivating surfaces.

Results is introduced

With this in mind, Recently Elisa Antolin Et al. of the Polytechnic University of Madrid, Spain, reported an open circuit voltage of up to 1.02 V in 120 nm thick vertical stacking homogenous junctions prepared using an alternative doping MoS2. This high open circuit voltage is consistent with the band arrangement in the MoS2 homojunction and has an advantage over the widely used TMDC heterojunction. This is also due to the high performance of substituted doped MoS2, especially nB-doped P-type materials. Although the block MoS2 has indirect properties, this has been demonstrated by observing the electroluminescence of tunneling graphene /BN/MoS2 structures. It was found that light TMDC/ metal contacts would reduce the open-circuit voltage measured in the VAN der Waals homogeneous MoS2 junction because they are photosensitive, indicating the need to develop low resistance ohmic contacts for doped MoS2 to achieve high efficiency in practical devices. The high open circuit voltage demonstrated in this paper demonstrates the potential of layered transition metal chalcogenides in the development of efficient, ultra-thin solar cells. The paper is entitled "High open-circuit Voltage in Transition Metal Dichalcogenide Solar Cells" and is published in the famous journal Nano Energy.