The solution processability of photosensitive halide perovskite makes it different from traditional inorganic semiconductor materials, which require multiple post-processing steps such as heat/vacuum/blow molding & solvent-assisted processing.

Recently, Penn State University Parker Shashank Priya, Kai Wang reported a technological breakthrough that is to isothermally crystallize high-quality perovskite films at room temperature (RT) without any post-processing.

The technology utilizes a low-level stable intermediate formed by three-dimensional perovskite through amine-assisted lattice expansion. Researchers used in-situ photoelectric/chemical and ex-situ structural characterization to clarify the structure of low-level stable intermediates in detail.

Together with metastable intermediates, the rapid evaporation of solvents and amines helps to achieve ultra-fast crystallization at RT within seconds. The perovskite film quickly synthesized by RT has a carrier diffusion length of 2.9 µm and a preferred orientation of {0 0ℓ}, with an ultra-high Lotgering factor of 97%. These films are highly compatible with conventional or inverted devices, with high power conversion efficiencies of 22.3% and 23.1%, respectively.

Kai Wang, et al, Isothermally Crystallize Perovskites at Room-Temperature, Energy Environ. Sci., 2020
DOI: 10.1039/D0EE01967D
https://dx.doi.org/10.1039/D0EE01967D
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