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17715390137
18101240246
18914047343
| 晶体种类： | 半导体，红外材料，拓扑材料 |
| 纯度： | >99.999 % |
| 表征方法： | EDS，SEM，Raman |
| 禁带宽度： | 0.5eV |
| 注意事项： | 表面易氧化 |
参考文献
1， Bandurin, Denis A., et al. "High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe." Nature nanotechnology 12.3 (2017): 223.
2，Mudd, Garry W., et al. "Tuning the bandgap of exfoliated InSe nanosheets by quantum confinement." Advanced MaterialsTamalampudi, Srinivasa Reddy, et al. "High performance and bendable few-layered InSe photodetectors with broad spectral response." Nano letters 14.5 (2014): 2800-2806. 25.40 (2013): 5714-5718.
3，Tamalampudi, Srinivasa Reddy, et al. "High performance and bendable few-layered InSe photodetectors with broad spectral response." Nano letters 14.5 (2014): 2800-2806.
4，Lei, Sidong, et al. "An atomically layered InSe avalanche photodetector." Nano letters 15.5 (2015): 3048-3055.
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