Item | AlN-T-C-C50 | |||
Dimension | Ф 50.8 ± 0.2 mm | |||
Thickness/Thickness STD | 1-5μm±10%/<3% | |||
Orientation of AIN | C-plane (0001) off angle toward A-axis 0.2±0.1° | |||
Orientation Flat of AIN | (1-100)0±0.2°,16±1mm | |||
Conduction Type | Semi-Insulating | |||
XRD Crystal Quality | [1,2)μm | [2,3)μm | [3,4)μm | [4,5)μm |
(0002)FWHM(arcsec) | ≤80 | ≤100 | ≤120 | ≤160 |
(10-12)FWHM(arcsec) | ≤650 | ≤550 | ≤450 | ≤400 |
Structure | ~1-5AIN/~20nm AIN buffer/430±25μm sapphire | |||
Edge Exclusion | ≤2.5μm | |||
Through Crack | None | |||
Orientation of sapphire | C plane(0001) off angle toward M-axis 0.2±0.1° | |||
Orientation Flat of sapphire |
(11-20)0±0.2°,16±1mm |
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Sapphire Polish | Single side polished(SSP)/Double side polished (DSP) | |||
Package |
Packagesd in a cleanroom in containers |
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