名称：ReSe2 二硒化铼（1g）粉体
晶体种类： 半导体材料，各向异性材料，拓扑材料
纯度： >99.999 %
表征方法： EDS，SEM，Raman
bandgap 1.3eV

注意事项 晶体稳定，注意表面防氧化

参考文献：

1， Jariwala, Bhakti, et al. "Synthesis and characterization of ReS2 and ReSe2 layered chalcogenide single crystals." Chemistry of Materials 28.10 (2016): 3352-3359.

2，Arora, Ashish, et al. "Highly Anisotropic in-Plane Excitons in Atomically Thin and Bulklike 1 T′-ReSe2." Nano letters 17.5 (2017): 3202-3207.

3，Wang, Ran, et al. "Dual‐Enhanced Doping in ReSe2 for Efficiently Photoenhanced Hydrogen Evolution Reaction." Advanced Science (2020): 2000216.