名称：超高纯 CuInP2S6 （1g）
晶体种类： 铁电材料
纯度： >99.999 %
表征方法： EDS，SEM，Raman

晶体生长方式： CVT 化学气相传输法

1， Belianinov, Alex, et al. "CuInP2S6 room temperature layered ferroelectric." Nano letters 15.6 (2015): 3808-3814.

2， Maisonneuve, V., et al. "Ionic conductivity in ferroic CuInP2S6 and CuCrP2S6." Ferroelectrics 196.1 (1997): 257-260.

3， Simon, A., et al. "Paraelectric-ferroelectric transition in the lamellar thiophosphate CuInP2S6." Chemistry of materials 6.9 (1994): 1575-1580.

4， Banys, J., et al. "Dielectric and ultrasonic investigation of phase transition in CuInP2S6 crystals." Phase Transitions 77.4 (2004): 345-358.

5，Si, Mengwei, et al. "Ferroelectric field-effect transistors based on MoS2 and CuInP2S6 two-dimensional van der Waals heterostructure." Acs Nano 12.7 (2018): 6700-6705.

6， Niu, Lin, et al. "Controlled synthesis and room-temperature pyroelectricity of CuInP2S6 ultrathin flakes." Nano Energy 58 (2019): 596-603.