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产品:Single crystal silicon carbide substrate SiC

Detailed

Name: Single crystal silicon carbide substrate SiC
Size: 2 inches
Crystal orientation: <0001>
4H-SiC
Double-sided polishing
Rough surface: <1nm
Thickness: 350±10 μm
High purity without doping
Class D film

Size: 2 inches
Crystal orientation: <0001>
4H-SiC
Double-sided polishing
Rough surface: <1nm
Thickness: 350±10 μm
Semi-insulating (vanadium doped)
Class D film

Size: 2 inches
Crystal orientation: <0001>
4H-SiC
Double-sided polishing
Rough surface: <1nm
Thickness: 350±10 μm
Conductivity (nitrogen doped)
Class D film

Size: 2 inches
Crystal orientation: <0001>
Main positioning edge: <10-10>
Rough surface: <1nm
Thickness: 330/430±10 μm
Level: Industrial Research Level



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Item ID Info
BKMK1343-01 CAS：
ID：BKMK1343
Pack：2英寸
Parameter：高纯不掺杂
Stock：100
Make up：
Price：$760
BKMK1343-02 CAS：
ID：BKMK1343
Pack：2英寸
Parameter：半绝缘（掺钒）
Stock：100
Make up：
Price：$560
BKMK1343-03 CAS：
ID：BKMK1343
Pack：2英寸
Parameter：导电型（掺氮）
Stock：100
Make up：
Price：$440
BKMK1343-04 CAS：
ID：BKMK1343
Pack：2英寸
Parameter：工业研究级别
Stock：100
Make up：
Price：$1300
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