Crystal types: semiconductors, infrared materials, topological materials
Purity: >99.999%
Characterization method: EDS, SEM, Raman
Forbidden band width: 0.5eV
Note: The surface is easy to oxidize


references
1. Bandurin, Denis A., et al. "High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe." Nature nanotechnology 12.3 (2017): 223.

2. Mudd, Garry W., et al. "Tuning the bandgap of exfoliated InSe nanosheets by quantum confinement." Advanced MaterialsTamalampudi, Srinivasa Reddy, et al. "High performance and bendable few-layered InSe photodetectors with broad spectral response." Nano letters 14.5 (2014): 2800-2806. 25.40 (2013): 5714-5718.

3. Tamalampudi, Srinivasa Reddy, et al. "High performance and bendable few-layered InSe photodetectors with broad spectral response." Nano letters 14.5 (2014): 2800-2806.

4. Lei, Sidong, et al. "An atomically layered InSe avalanche photodetector." Nano letters 15.5 (2015): 3048-3055.