product photo:

A high-quality epitaxial monolayer graphene is fabricated on Si-face of semi-insulating, transparent {0001} 4H-SiC substrates via solid-state graphitization. During the sublimation process, a specific buffer layer that has a distorted graphene-like structure forms between the graphene film and the underlying SiC substrate. Both the substrate and the buffer layer influence the electronic properties, resulting in intrinsic n-doping of the epitaxially grown monolayer graphene.

Note: Graphene side is facing up in the box. Take precaution while handling the sample to avoid any damage to the film.

Key Features:

Excellent carrier mobility

Controlled growth of Graphene layers

Better purity of the samples

Potential scalable method for graphene fabrication

Sample parameters:

Substrate parameters:

Sample characterization:

Raman:

透过：

Hall effect test: