Performance parameters:

• 

• Product number	GaN-T-C-N-C100
  Size	Ф 100 ± 0.1 mm
  Thickness	4.5±0.5 μm, 20±2 μm
  Crystal orientation	C-plane(0001) ± 0.5°
  Conductivity type	N-type(Si-doped)
  Resistivity (300 K)	< 0.05Ω·cm
  Carrier concentration	>  1x1018cm-3
  Mobility	~ 200cm2/V•s
  Dislocation density	Less than 5x108 cm-2(estimated by FWHMs of XRD)
  Substrate structure	GaN on sapphire (standard :SSP option:DSP)
  Effective area	>90%
  package	Packaged in a class 100 clean room environment, in cassette of 25pcs or single container , under a nitrogen atmosphere.