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产品:AgInP2S6 crystal

Detailed

Material name: AgInP2S6


Property classification: semiconductor, nonlinear material, ferroelectric material


Band gap: 1.147 eV


Synthesis method: CVT


Degree of difficulty of peeling: easy




Material properties reference:


1, https://doi.org/10.1039/C7RA13519J


Structural, electronic, vibration and elasticproperties of the layered AgInP2S6 semiconductingcrystal – DFT approach






2, https://aip.scitation.org/doi/10.1063/1.4962956


Second-harmonic generation in quaternary atomically thin layered AgInP2S6 crystals


Crystal structure:






Band structure:






Highly Oriented Crystal XRD 


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Item ID Info
BK2021051304-01 CAS：
ID：BK2021051304
Pack：＞10平方毫米
Parameter：
Stock：100
Make up：
Price：$390
BK2021051304-02 CAS：
ID：BK2021051304
Pack：＞25平方毫米
Parameter：
Stock：100
Make up：
Price：$640
BK2021051304-03 CAS：
ID：BK2021051304
Pack：＞100平方毫米
Parameter：
Stock：100
Make up：
Price：$1390
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