Substrate: 300nm oxide layer silicon wafer, 5um equidistant gold electrode


Structure: First peel off the single layer of MoS2 to the designated position, and then transfer the small layer of TiS3 titanium trisulfide to the MoS2 position to form three regions of MoS2-TiS3/MoS2-TiS3. FET properties can be tested on separate two materials and heterojunctions.

Warm tip: the products supplied by Beijing Beike Xincai Technology Co., Ltd. are only used for scientific research, not for human body