产品:BP FET Black Phosphorus FET, Mechanically Stripped Black Phosphorus Transistor
Detailed
Device structure: highly doped conductive silicon wafer/300nm oxide layer silicon wafer/gold electrode/mechanically exfoliated few-layer black phosphorus
Channel width, 5um
Warm tip: the products supplied by Beijing Beike Xincai Technology Co., Ltd. are only used for scientific research, not for human body |
Item ID | Info |
BK2022050701-01 | CAS: ID:BK2022050701 Pack:黑磷FET+金电极 Parameter: Stock:100 Make up: Price:$562 |
BK2022050701-02 | CAS: ID:BK2022050701 Pack:IV测试数据 Parameter: Stock:100 Make up: Price:$56 |
BK2022050701-03 | CAS: ID:BK2022050701 Pack:转移特性测试数据 Parameter: Stock:100 Make up: Price:$56 |
BK2022050701-04 | CAS: ID:BK2022050701 Pack:Raman测试数据 Parameter: Stock:100 Make up: Price:$56 |
- Previous: Single-layer 2H MoTe2
- Next: Graphene FET (Mechanic