产品:Ga2O3 gallium oxide, gallium trioxide thin film
Detailed
The above price is a reference price, please consult the technology for detailed quotation.
Electron beam evaporation deposited films on 4-inch silicon wafers.
Substrate: 4-inch silicon wafer, N-type or P-type optional, resistivity less than 0.1ohm*cm
Gallium oxide thickness, 50nm
Warm tip: the products supplied by Beijing Beike Xincai Technology Co., Ltd. are only used for scientific research, not for human body |
Item ID | Info |
BK2022051206-01 | CAS: ID:BK2022051206 Pack:1片装 Parameter: N型 Stock:100 Make up: Price:$225 |
BK2022051206-02 | CAS: ID:BK2022051206 Pack:1片装 Parameter: P型 Stock:100 Make up: Price:$225 |
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