Material name: AgInP2S6
Property classification: semiconductor, nonlinear material, ferroelectric material
Band gap: 1.147 eV
Synthesis method: CVT
Degree of difficulty of peeling: easy
Material properties reference:
1, https://doi.org/10.1039/C7RA13519J
Structural, electronic, vibration and elasticproperties of the layered AgInP2S6 semiconductingcrystal – DFT approach
2, https://aip.scitation.org/doi/10.1063/1.4962956
Second-harmonic generation in quaternary atomically thin layered AgInP2S6 crystals
Crystal structure:
Band structure:
Highly Oriented Crystal XRD
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Item ID | CAS | ID | Pack | Parameter | Stock | Make up | Price |
BK2021051304-01 | BK2021051304 | >10平方毫米 | 100 | $390 | |||
BK2021051304-02 | BK2021051304 | >25平方毫米 | 100 | $640 | |||
BK2021051304-03 | BK2021051304 | >100平方毫米 | 100 | $1390 |
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