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Among all available MXene, the ternary precursor of Mo2CTx MXene and Mo2Ga2C contains double A layer, which has high electrochemical and thermoelectric properties. However, due to the strong bonding of M-Ga in the precursor, it is difficult to prepare Mo2CTx MXene. Generally, Mn + 1AXn phase containing Al, such as Ti3C2Tx, Nb2AlC, etc., can be easily stripped in hydrofluoric acid (HF) to obtain MXenes. However, for Mo2CTx MXene, there is no corresponding Mn+1AXn phase contained in Al. Therefore, the synthesis of Mo2CTx MXene is still challenging. According to the synthesis research of Mo2CTX MXene, the stripping of high concentration HF is still the main method used. Although the preparation of Mo2CTx MXene and the improvement of its electrochemical performance have been achieved in related studies, the low exfoliation of multilayer Mo2CTx and the extremely long etching time limit its practical application. In addition, surface oxidation caused by long-term etching will affect the unique properties of Mo2CTx. In addition, the surface functional groups interact with the electrolyte, leading to undesirable side reactions. In this context, it is still extremely challenging to develop a simple method to increase the exfoliation of Mo2CTx and simultaneously form a protective layer to avoid surface oxidation and reduce side reactions between surface functional groups and electrolytes.
https://doi.org/10.1016/j.cej.2020.128349
Information source: MXene Frontier
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