IF 12.1! Wide-range tunability of composition-dependent optical and electronic properties in SnS x Se(2-x) alloy nanosheets
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Although the isovalent alloying strategy provides a precise route for tuning the properties of printable metal dichalcogenide nanomaterials, a scalable platform capable of achieving widely tunable optical and electrical properties has not yet been realized. In this study, we established a powder- and solution-phase processing route to successfully obtain SnSxSe(2-x) alloy nanosheets covering the full compositional range, achieving broad control over multiple properties by adjusting the chalcogenide element composition.This series of n-type nanosheet alloys exhibits a wide tunable range in both optical and in-plane electrical properties: from 2D SnSe2 with a low bandgap of 1.67 eV, showing metallic-like behavior, to 2D SnS2 with a bandgap of 2.46 eV, exhibiting wide-bandgap semiconductor behavior with high resistivity. Their out-of-plane conductivity is also tunable and shows non-monotonic behavior, reaching optimal values when the chalcogen element ratio x is between 1.2 and 1.6.Taking photoelectrochemical applications as an example, we illustrate how the synergy between these tunable properties enables optimized performance for specific applications. The exceptionally broad range of customizable features reported in this study provides a clear roadmap for regulating such alloys, thereby opening up new avenues for their potential applications in various fields.


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Composition-Dependent Wide-Range Tunability of Optical and Electronic Properties in SnSxSe(2-x) Alloy Nanosheets

Small ( IF 12.1 )

Pub Date : 2025-12-31

DOI: 10.1002/smll.202512066

Nicolas J. Diercks,  Rebekah A. Wells,  Shixin Liu,  Tian Carey,  Jack Doran,  Joseph Neilson,  YeonJu Kim,  Jun‐Ho Yum,  Goutam Ghosh,  Hannah Johnson,  Laurens D. A. Siebbeles,  Jonathan N. Coleman,  Kevin Sivula


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