MXene Ti3C2 Nb2C V2C MOF Nb2C Two dimensional materials

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MXenes-Max 2D transition metal carbonitride	MBene two-MAB-dimensional transition metal borides	MOFs metal organic framework compound	COFs covalent organic compound
Bioluminescent dyes	Aerogels	CVD TMDC 2D thin film / heterojunction	Perovskite material
Copper-doped modified lead apatite (LK 99 crystal powder)	2D material fiber/film	Two-dimensional material micro-nano processing - in situ testing	Basic magnetic beads, immunomagnetic beads, protein purification magnetic beads, nucleic acid extraction magnetic beads
Nucleic acid extraction kit	High-entropy materials	Biological nanomaterials	Nanocellulose
AIE luminescent material	Silane Bismuthene Borene Tellurene Phosphorene Graphyne	Binary CVD TMDC crystal/powder/dispersion	Ternary CVD TMDC crystal/powder/dispersion
Graphene and carbon nanomaterials	High-performance battery materials	Carbon nanotube/fullerene series	Nano/micron powder material and AAO template
Nanowires	Molecular sieve	Ionic liquid	QDS
Nanomaterial customization / material simulation calculation	Metal nanomaterials	Mesoporous materials	Heavy launch-new products are online!
Two-dimensional layered double hydroxide	catalyst	Nanosphere	Material testing and consumables
Inorganic Nanomaterials	equipment	MXenes 2D transition metal carbonitride	MBene two-dimensional transition metal borides

price

500元 501-1000元 1001-2000元 2000元以上

Photo

ID/CAS

Item ID

Name/specification

price

Melting point: 254 degrees Bismuth-zinc alloy temperature control alloy die alloy Fusible alloy Bi-based alloy

BK2020081805

	Melting point: 254 degrees Bismuth-zinc alloy temperature control alloy die alloy Fusible alloy Bi-based alloy
BK2020081805-01	100g

$ 13

Melting point: 262 degrees, metal alloy, temperature control alloy, fusible alloy, ultra-low temperature alloy, die alloy

BK2020081804

	Melting point: 262 degrees, metal alloy, temperature control alloy, fusible alloy, ultra-low temperature alloy, die alloy
BK2020081804-01	100g

$ 25

Melting point 240 degrees Bi-gold alloy temperature control alloy Fusible alloy Ultra-low temperature alloy Bi-based alloy

BK2020081803

	Melting point 240 degrees Bi-gold alloy temperature control alloy Fusible alloy Ultra-low temperature alloy Bi-based alloy
BK20200818030-01	1g

$ 25

Melting point 70 degrees Wood‘s alloy bismuth tin lead temperature control alloy fusible alloy ultra-low temperature alloy die alloy

BK2020081802

	Melting point 70 degrees Wood‘s alloy bismuth tin lead temperature control alloy fusible alloy ultra-low temperature alloy die alloy
BK2020081802-01	100g

$ 120

BK2020081801

	30 degree low temperature single metal
BK2020081801-03	试管
BK2020081801-02	10克/管
BK2020081801-01	1Kg/瓶

$ 242

2 inch aluminum nitride thick film wafer

BK2020081715

	2 inch aluminum nitride thick film wafer
BK2020081715-08	双抛厚度：[4,5)μm
BK2020081715-07	双抛厚度：[3,4)μm
BK2020081715-06	双抛厚度：[2,3)μm
BK2020081715-05	双抛厚度：[1,2)μm
BK2020081715-04	单抛厚度：[4,5)μm
BK2020081715-03	单抛厚度：[3,4)μm
BK2020081715-02	单抛厚度：[2,3)μm
BK2020081715-01	单抛厚度：[1,2)μm

$ 500

BK2020081714

	2-inch GaN thick film wafer (Mg doped)
BK2020081714-02	双抛4.5±0.5μm
BK2020081714-01	单抛4.5±0.5μm

$ 180

BK2020081713

	2-inch GaN thick film wafer (Si doped)
BK2020081713-04	双抛20±2μm
BK2020081713-03	双抛4.5±0.5μm
BK2020081713-02	单抛20±2μm
BK2020081713-01	单抛4.5±0.5μm

$ 140

BK2020081712

	2-inch GaN thick film wafer (undoped)
BK2020081712-04	双抛20±2μm
BK2020081712-03	双抛4.5±0.5μm
BK2020081712-02	单抛20±2μm
BK2020081712-01	单抛4.5±0.5μm

$ 120

BK2020081711

	4-inch GaN thick film wafer (Si doped)
BK2020081711-02	20±2μm
BK2020081711-01	4.5±0.5μm

$ 660

BK2020081710

	4-inch GaN thick film wafer (undoped)
BK2020081710-02	20±2μm
BK2020081710-01	4.5±0.5μm

$ 660

Non-polar/semi-polar GaN self-supporting substrate (SP surface)

BK2020081709

	Non-polar/semi-polar GaN self-supporting substrate (SP surface)
BK2020081709-04	Semi-insulating5*20.5mm2
BK2020081709-03	Semi-insulating5*10.5mm2
BK2020081709-02	Un-doped5*20.5mm2
BK2020081709-01	Un-doped5*10.5mm2

$ 600

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