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MXenes-Max 2D transition metal carbonitride
MBene two-MAB-dimensional transition metal borides
MOFs metal organic framework compound
COFs covalent organic compound
Bioluminescent dyes
Aerogels
CVD TMDC 2D thin film / heterojunction
Perovskite material
Copper-doped modified lead apatite (LK 99 crystal powder)
2D material fiber/film
Two-dimensional material micro-nano processing - in situ testing
Basic magnetic beads, immunomagnetic beads, protein purification magnetic beads, nucleic acid extraction magnetic beads
Nucleic acid extraction kit
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AIE luminescent material
Silane Bismuthene Borene Tellurene Phosphorene Graphyne
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Nano/micron powder material and AAO template
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Two-dimensional layered double hydroxide
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MXenes 2D transition metal carbonitride
MBene two-dimensional transition metal borides
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position： home > Product > Two-dimensional material micro-nano processing - in situ testing

Two-dimensional material micro-nano processing - in situ testing
Two dimensional material transfer system Heterojunction customization Customized wafer consumables Micro and nano devices
Electrode customization Transient absorption spectrum Monocrystalline silicon substrate GaN wafer
FET devices Two-dimensional material device Design and processing Photoelectric comprehensive test system
Photocurrent test system Spectrum test system
price
500元    501-1000元    1001-2000元    2000元以上

Photo ID/CAS Item ID Name/specification price

Graphene FET (Mechanical Exfoliation) BK2022062011
  Graphene FET (Mechanical Exfoliation)
BK2022062011 一片装
$ 562
Graphene FET, GrFET, Graphene Transistor, Back Gate Graphene Transistor, Graphene Biosensor BK202206210
  Graphene FET, GrFET, Graphene Transistor, Back Gate Graphene Transistor, Graphene Biosensor
BK202206210 一片装
$ 187
MoS2 FET, Molybdenum Disulfide Transistor, Monolayer Molybdenum Disulfide Transistor BK2022062009
  MoS2 FET, Molybdenum Disulfide Transistor, Monolayer Molybdenum Disulfide Transistor
BK2022062009 一片装
$ 562
MoSe2 FET, Molybdenum Diselenide Transistor BK2022062008
  MoSe2 FET, Molybdenum Diselenide Transistor
BK2022062008 一片装
$ 562
MoSe2 FET array, CVD MoSe2 FET array BK2022062007
  MoSe2 FET array, CVD MoSe2 FET array
BK2022062007 一片装
$ 2062
Double layer PtSe2 FET array BK2022062006
  Double layer PtSe2 FET array
BK2022062006 一片装
$ 2062
Multilayer ReS2/PdSe2 FET Devices BK202206205
  Multilayer ReS2/PdSe2 FET Devices
BK202206205 一片装
$ 937
ReS2 Mechanically Stripped FET Rhenium Disulfide FET BK2022062004
  ReS2 Mechanically Stripped FET Rhenium Disulfide FET
BK2022062004-02 1片装多层
BK2022062004-01 1片装少层
$ 750
ReSe2 FET Back-gate FET BK202206203
  ReSe2 FET Back-gate FET
BK202206203 一片装
$ 750
Mechanical lift-off WS2 FET, back gate WS2 FET BK2022062002
  Mechanical lift-off WS2 FET, back gate WS2 FET
BK2022062002-03 1片装多层WS2 FET
BK2022062002-02 1片装少层WS2 FET
BK2022062002-01 1片装单层WS2 FET
$ 750
Mechanical lift-off of HfS2 FET devices BK2022062001
  Mechanical lift-off of HfS2 FET devices
BK2022062001-02 一片装多层HfS2 FET
BK2022062001-01 一片装少层HfS2 FET
$ 750
Pre-deposited unequal electrode wafers BK2022051208
  Pre-deposited unequal electrode wafers
BK2022051208-02 P型300nm
BK2022051208-01 N型300nm
$ 900
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