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Inorganic Nanomaterials equipment MXenes 2D transition metal carbonitride MBene two-dimensional transition metal borides
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500元    501-1000元    1001-2000元    2000元以上

Photo ID/CAS Item ID Name/specification price

Non-polar/semi-polar GaN free-standing substrate (M side) BK2020081708
  Non-polar/semi-polar GaN free-standing substrate (M side)
BK2020081708-04 Semi-insulating5*20.5mm2
BK2020081708-03 Semi-insulating5*10.5mm2
BK2020081708-02 Un-doped5*20.5mm2
BK2020081708-01 Un-doped5*10.5mm2
$ 600
Non-polar/semi-polar GaN free-standing substrate (A side) BK2020081707
  Non-polar/semi-polar GaN free-standing substrate (A side)
BK2020081707-04 Semi-insulating5*20.5mm2
BK2020081707-03 Semi-insulating5*10.5mm2
BK2020081707-02 Un-doped5*20.5mm2
BK2020081707-01 Un-doped5*10.5mm2
$ 600
10×10.5mm2 GaN self-supporting wafer (Fe doped) BK2020081706
  10×10.5mm2 GaN self-supporting wafer (Fe doped)
BK2020081706-09 Double-抛光位错密度:1~5 x 105 cm-2
BK2020081706-08 Double-抛光位错密度:5~9 x 105 cm-2
BK2020081706-07 Double-抛光位错密度:1~3 x 106 cm-2
BK2020081706-06 N-抛光位错密度:1~5 x 105 cm-2
BK2020081706-05 N-抛光位错密度:5~9 x 105 cm-2
BK2020081706-04 N-抛光位错密度:1~3 x 106 cm-2
BK2020081706-03 Ga-抛光位错密度:1~5 x 105 cm-2
BK2020081706-02 Ga-抛光位错密度:5~9 x 105 cm-2
BK2020081706-01 Ga-抛光位错密度:1~3 x 106 cm-2
$ 390
10×10.5mm2 GaN self-supporting wafer (Si doped) BK2020081705
  10×10.5mm2 GaN self-supporting wafer (Si doped)
BK2020081705-09 Double-抛光位错密度:1~5 x 105 cm-2
BK2020081705-08 Double-抛光位错密度:5~9 x 105 cm-2
BK2020081705-07 Double-抛光位错密度:1~3 x 106 cm-2
BK2020081705-06 N-抛光位错密度:1~5 x 105 cm-2
BK2020081705-05 N-抛光位错密度:5~9 x 105 cm-2
BK2020081705-04 N-抛光位错密度:1~3 x 106 cm-2
BK2020081705-03 Ga-抛光位错密度:1~5 x 105 cm-2
BK2020081705-02 Ga-抛光位错密度:5~9 x 105 cm-2
BK2020081705-01 Ga-抛光位错密度:1~3 x 106 cm-2
$ 390
10×10.5mm2 GaN self-supporting wafer (non-doped) BK2020081704
  10×10.5mm2 GaN self-supporting wafer (non-doped)
BK2020081704-09 Double-抛光位错密度:1~5 x 105 cm-2
BK2020081704-08 Double-抛光位错密度:5~9 x 105 cm-2
BK2020081704-07 Double-抛光位错密度:1~3 x 106 cm-2
BK2020081704-06 N-抛光位错密度:1~5 x 105 cm-2
BK2020081704-05 N-抛光位错密度:5~9 x 105 cm-2
BK2020081704-04 N-抛光位错密度:1~3 x 106 cm-2
BK2020081704-03 Ga-抛光位错密度:1~5 x 105 cm-2
BK2020081704-02 Ga-抛光位错密度:5~9 x 105 cm-2
BK2020081704-01 Ga-抛光位错密度:1~3 x 106 cm-2
$ 300
2-inch GaN self-supporting wafer (Fe doped) BK2020081703
  2-inch GaN self-supporting wafer (Fe doped)
BK2020081703-18 Double-抛光等级:A-2
BK2020081703-17 Double-抛光等级:A-1
BK2020081703-16 Double-抛光等级:S-2
BK2020081703-15 Double-抛光等级:S-1
BK2020081703-14 Double-抛光等级:C
BK2020081703-13 Double-抛光等级:B
BK2020081703-12 N-抛光等级:A-2
BK2020081703-11 N-抛光等级:A-1
BK2020081703-10 N-抛光等级:S-2
BK2020081703-09 N-抛光等级:S-1
BK2020081703-08 N-抛光等级:C
BK2020081703-07 N-抛光等级:B
BK2020081703-06 Ga-抛光等级:A-2
BK2020081703-05 Ga-抛光等级:A-1
BK2020081703-04 Ga-抛光等级:S-2
BK2020081703-03 Ga-抛光等级:S-1
BK2020081703-02 Ga-抛光等级:C
BK2020081703-01 Ga-抛光等级:B
$ 3000
2-inch GaN self-supporting wafer (Si doped) BK2020081702
  2-inch GaN self-supporting wafer (Si doped)
BK2020081702-18 Double-抛光等级:A-2
BK2020081702-17 Double-抛光等级:A-1
BK2020081702-16 Double-抛光等级:S-2
BK2020081702-15 Double-抛光等级:S-1
BK2020081702-14 Double-抛光等级:C
BK2020081702-13 Double-抛光等级:B
BK2020081702-12 N-抛光等级:A-2
BK2020081702-11 N-抛光等级:A-1
BK2020081702-10 N-抛光等级:S-2
BK2020081702-09 N-抛光等级:S-1
BK2020081702-08 N-抛光等级:C
BK2020081702-07 N-抛光等级:B
BK2020081702-06 Ga-抛光等级:A-2
BK2020081702-05 Ga-抛光等级:A-1
BK2020081702-04 Ga-抛光等级:S-2
BK2020081702-03 Ga-抛光等级:S-1
BK2020081702-02 Ga-抛光等级:C
BK2020081702-01 Ga-抛光等级:B
$ 2200
2-inch GaN self-supporting wafer (undoped) BK2020081701
  2-inch GaN self-supporting wafer (undoped)
BK2020081701-18 Double-抛光等级:A-1
BK2020081701-17 Double-抛光等级:S-2
BK2020081701-16 Double-抛光等级:S-1
BK2020081701-15 Double-抛光等级:A-2
BK2020081701-14 Double-抛光等级:C
BK2020081701-13 Double-抛光等级:B
BK2020081701-12 N-抛光等级:A-1
BK2020081701-11 N-抛光等级:S-2
BK2020081701-10 N-抛光等级:S-1
BK2020081701-09 N-抛光等级:A-2
BK2020081701-08 N-抛光等级:C
BK2020081701-07 N-抛光等级:B
BK2020081701-06 Ga-抛光等级:A-1
BK2020081701-05 Ga-抛光等级:S-2
BK2020081701-04 Ga-抛光等级:S-1
BK2020081701-03 Ga-抛光等级:A-2
BK2020081701-02 Ga-抛光等级:C
BK2020081701-01 Ga-抛光等级:B
$ 1800
AAO双通过滤膜 (Φ13mm/25mm / 47mm) BK625020
  AAO双通过滤膜 (Φ13mm/25mm / 47mm)
BK025200-01 10片 Φ25mmD:0.2μm
BK025100-01 10片 Φ25mmD:0.1μm
BK025020-01 10片 Φ25mmD:0.02μm
BK013200-01 10片 Φ13mmD:0.2μm
BK013100-01 10片 Φ13mmD:0.1μm
BK013020-01 10片 Φ13mmD:0.02μm
BK647200-01 10片 Φ47mmD:0.2μm
BK647100-01 10片 Φ47mmD:0.1μm
BK647020-01 10片 Φ47mmD:0.02μm
BK625200-01 10片 Φ25mmD:0.2μm
BK625100-01 10片 Φ25mmD:0.1μm
BK625020-01 10片 Φ25mmD:0.02μm
$ 1657
V-type single-pass AAO nano template BKAAOVS11
  V-type single-pass AAO nano template
BKAAOVS44-01 20*20mmUp: 400nm Down:100nm
BKAAOVS43-01 20*20mmUp: 400nm Down:100nm
BKAAOVS42-01 20*20mmUp: 300nm Down:100nm
BKAAOVS41-01 20*20mmUp: 200nm Down:100nm
BKAAOUS11-01 20*20mmUp: 100nm Down:40nm
BKAAOVS11-01 20*20mmUp: 90nm Down:40nm
$ 48
U-shaped single-pass AAO nano template D: 300nm-D: 700nm BKAAOSP71
  U-shaped single-pass AAO nano template D: 300nm-D: 700nm
BKAAOSP96-01 20*20mm700nm*800nm*5μm
BKAAOSP95-01 20*20mm600nm*800nm*5μm
BKAAOSP94-01 20*20mm500nm*800nm*5μm
BKAAOSP82-01 20*20mm400nm*450nm*60μm
BKAAOSP81-01 20*20mm400nm*450nm*5μm
BKAAOSP72-01 20*20mm300nm*450nm*60μm
BKAAOSP71-01 20*20mm300nm*450nm*5μm
$ 48
U-shaped single-pass AAO nano template D:10nm-D:200nm BKAAOSP11
  U-shaped single-pass AAO nano template D:10nm-D:200nm
BKAAOSP62-01 20*20mm200nm*450nm*60μm
BKAAOSP61-01 20*20mm200nm*450nm*5μm
BKAAOSP53-01 20*20mm90nm*100nm*60μm
BKAAOSP52-01 20*20mm90nm*100nm*5μm
BKAAOSP51-01 20*20mm90nm*100nm*300nm
BKAAOSP43-01 20*20mm70nm*100nm*60μm
BKAAOSP42-01 20*20mm70nm*100nm*5μm
BKAAOSP41-01 20*20mm70nm*100nm*300nm
BKAAOSP33-01 20*20mm50nm*100nm*60μm
BKAAOSP32-01 20*20mm50nm*100nm*5μm
BKAAOSP31-01 20*20mm50nm*100nm*300nm
BKAAOSP303-01 20*20mm50nm*65nm*60μm
BKAAOSP302-01 20*20mm50nm*65nm*5μm
BKAAOSP301-01 20*20mm50nm*65nm*300nm
BKAAOSP23-01 20*20mm30nm*65nm*60μm
BKAAOSP22-01 20*20mm30nm*65nm*5μm
BKAAOSP21-01 20*20mm30nm*65nm*300nm
BKAAOSP12-01 20*20mm10nm*25nm*1μm
BKAAOSP11-01 20*20mm10nm*25nm*50nm
$ 20
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