Two-dimensional material micro-nano processing - in situ testing Two-dimensional material micro-nano processing - in situ testing> GaN wafer

产品:Non-polar/semi-polar GaN self-supporting substrate (SP surface)

Detailed

Performance parameters:

  • Product number GaN-FS-SP-U/N/SI-S
    Size (5.0~10.0)× 10.0 mm2
    (5.0~10.0)× 20.0mm2
    Thickness 350±25μm
    Planes (2021)
    (2021
    (1122)
    (1011)
    Chamfer angle -1°±0.2°
    TTV ≤10μm
    Curvature ≤10μm
    Conductivity type
    Resistivity(300 K)
    N-type  < 0.1Ω·cm
    N-type < 0.05Ω·cm
    Semi-Insulating > 106Ω·cm
    Dislocation density From 1x105 to 3x106 cm-2
    Effective area >90%
    Polished Front Surface:Ra<0.2 nm(polished)
    Back Surface:1-3nm(fine ground);
    option:<0.2nm(polished).
    package Packaged in a class 100 clean room environment,
    in single container,under a nitrogen atmosphere.





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Item ID Info
BK2020081709-01 CAS:
ID:BK2020081709
Pack:Un-doped
Parameter:5*10.5mm2
Stock:100
Make up:
Price:$600
BK2020081709-02 CAS:
ID:BK2020081709
Pack:Un-doped
Parameter:5*20.5mm2
Stock:100
Make up:
Price:$1400
BK2020081709-03 CAS:
ID:BK2020081709
Pack: Semi-insulating
Parameter:5*10.5mm2
Stock:100
Make up:
Price:$800
BK2020081709-04 CAS:
ID:BK2020081709
Pack: Semi-insulating
Parameter:5*20.5mm2
Stock:100
Make up:
Price:$1600
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