MoSe2 based on GaAs substrate

Our company is currently able to manufacture high quality monolayer MoSe2 films.
The largest 4 inch discs are currently available, and larger sizes (8, 12 inches) are coming soon.

Production method:

Chemical Vapor Deposition （CVD）

Product introduction:

MoSe2  films have sevaral kinds:
1) A single-layer discretely distributed triangular single crystal grain whose triangular side length is generally several tens  micrometers.

2) Continued growth from isolated grains A single layer of continuous film joined together with multiple layers on top.

3) Substrate: MoSe2 has many optional substrates, among which the most commonly used   Si/SiO2 substrate are direct deposition products. Other substrates such as PET, PI, ITO, FTO, glass, metal substrates, etc. are transferred to the substrate desired by the customer after growth on sapphire.

Application fields:

Optoelectronic devices, microelectronic devices, biosensing, chemical sensing and other fields.

Packaging and specifications:

10 * 10mm, 15 * 15mm, 20 * 20mm, 2" disc, 4" disc or custom size specified by the customer.
Purification vacuum packaging, 1 piece / box, 5 pieces / box. 10 pieces / box.

Typical customers include:

Massachusetts Institute of Technology, California Institute of Technology, Stanford University;
Oxford University, Manchester University;
Seoul National University, Korea Institute of Science and Technology (KAIST), Sungkyunkwan University;Tokyo Institute of Technology, Murata Manufacturing Co., Ltd.,Tsinghua University, Peking University, Institute of Semiconductors, Chinese Academy of Sciences,And other world-class research institutions.

MoSe2 isolated grain

MoSe2 continuous film (including multi-layer area)