Substrate: 300nm oxide layer silicon wafer substrate, gold electrode
Structure: Position the transferred and peeled thin layer of ReSe2 material on the gold electrode, and then position the transferred and peeled thin layer of ReS2 material on the ReSe2. Form three independently testable FET structures (ReSe2, ReSe2+ReS2 heterojunction, ReS2).
Warm tip: the products supplied by Beijing Beike Xincai Technology Co., Ltd. are only used for scientific research, not for human body |
Item ID | CAS | ID | Pack | Parameter | Stock | Make up | Price |
BK2021121043 | BK2021121043 | 1片 | 300nm氧化层硅片基底,金电极 | 100 | $937 |
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