Silicon-based single crystal graphene

Background introduction:
The current methods for preparing high-quality graphene include tape stripping, silicon carbide or metal surface epitaxial growth, and chemical vapor deposition (CVD). The first two methods have low efficiency and are not suitable for mass production. So far, the graphene prepared by the CVD method is generally a polycrystalline material spliced by graphene domains of nanometer to micrometer size.
Graphene‘s excellent electricity, light, strength and many other excellent properties make it have important potential applications in the fields of electronics, spintronics, optoelectronics, solar cells, sensors, etc., but large-scale high-quality preparation technology restricts its entry One of the bottlenecks in practical applications.
After a long time of technical research, the Muke nanotechnology team successfully prepared 100μm to several mm grade six by using low-concentration methane and high-concentration hydrogen on common copper substrates through atmospheric CVD method without using expensive metal substrates. Edge-shaped single-crystal graphene and graphene film composed of it. And it can be transferred to any substrate for easy access.
The single crystal graphene transferred by this method has high quality, and it is transferred to a Si/SiO2 substrate to make a field effect transistor. Measurements show that the carrier mobility of the single crystal graphene at room temperature can reach 7100cm2V-1s- 1.
The breakthrough in the growth of large-size single-crystal graphene on a common copper substrate and its thin film technology has laid a material foundation for the research on the basic physical properties of graphene and its practical application in high-performance nanoelectronic devices and transparent conductive films.