ID：BK100048
CAS：7440-44-0
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Item ID：BK100048
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A high-quality epitaxial monolayer graphene is fabricated on Si-face of semi-insulating, transparent {0001} 4H-SiC substrates via solid-state graphitization. During the sublimation process, a specific buffer layer that has a distorted graphene-like structure forms between the graphene film and the underlying SiC substrate. Both the substrate and the buffer layer influence the electronic properties, resulting in intrinsic n-doping of the epitaxially grown monolayer graphene.
Excellent carrier mobility
Controlled growth of Graphene layers
Better purity of the samples
Potential scalable method for graphene fabrication
Sample parameters:
Substrate parameters:
Sample characterization:
Raman:
透过：
Hall effect test:
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| Item ID | CAS | ID | Pack | Parameter | Stock | Make up | Price |
| BK100048 | 7440-44-0 | BK100048 | 8*8mm | 100 | $0 |
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