registered   |   log in
  中文

Application

 
contact us

hotline:

17715390137

Tel/Wechat:

  18101240246 (Technology)

0512-68565571

Emailmxenes@163.com (Sales Engineer)bkxc.bonnie@gmail.com

Scan the code to follow or search the official account on WeChat: 

2D Materials Fronrier After paying attention, 

click on the lower right corner to contact us, 

Enter enterprise WeChat.

Professional Services Online

Application
position: home > Application

New Nature: Wafer-level single crystal hexagonal boron nitride single layer

source:beike new material Views:3515time:2020-08-10 QQ Academic Group: 1092348845

【introduction】

Ultra-thin two-dimensional semiconductor layered materials are believed to effectively extend Moore‘s Law of integrated circuit transistors. The key challenge currently facing 2D semiconductors is how to avoid the formation of charge scattering and trap sites in adjacent dielectrics. More and more studies have shown that the insulating van der Waals layer of hexagonal boron nitride (hBN) can provide excellent interfacial dielectric properties while effectively reducing charge scattering. However, how to achieve reliable single crystal hexagonal boron nitride thin film growth on wafers has become a technical difficulty that must be tackled in the industry.
[Achievement Profile]

Wen-Hao Chang of National Chiao Tung University in Taiwan, Lain-Jong Li of TSMC, and BI Yakobson (co-corresponding author) of Rice University in the United States have jointly reported on the successful epitaxial growth of single crystal hexagons on sapphire wafer Boron nitride single layer. Previous theories have suggested that a hexagonal boron nitride single layer cannot achieve unidirectional growth on a highly symmetrical copper (111) metal surface. However, researchers have unexpectedly discovered that after lateral docking of hexagonal boron nitride with copper (111), the epitaxial growth of hexagonal boron nitride can be enhanced and the epitaxial growth is guaranteed to be unidirectional. The study also found that the single crystal hexagonal boron nitride thus prepared can be integrated between molybdenum disulfide and hafnium dioxide as an interface layer, which can greatly enhance the electrical performance of the transistor. The study believes that this method, which can be used to produce wafer-level single crystal hexagonal boron nitride, lays the foundation for the realization of new two-dimensional electronic devices. On March 04, 2020, related results were published online in Nature with an article entitled "Wafer-scale single-crystal hexagonal boron nitride monolayers on Cu (111)".

[Picture and text guide]

Literature link: Wafer-scale single-crystal hexagonal boron nitride monolayers on Cu (111) (Nature, 2020, DOI: 10.1038 / s41586-020-2009-2)


 

Reminder: Beijing Beike New Material Technology Co., Ltd. supplies products only for scientific research, not for humans
All rights reserved © 2019 beijing beike new material Technology Co., Ltd 京ICP备16054715-2号
advisory
phone
Email:mxenes@163.com
Tel:+86-17715390137
scan

scan
WeChat