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position： home > Product > CVD TMDC 2D thin film / heterojunction> MoSe2 film

CVD TMDC 2D thin film / heterojunction
Mechanical peeling single layer material customization MoS2/TiS3 titanium trisulfide molybdenum disulfide heterojunction Black phosphorus ReSe2 heterojunction device, BP/ReSe2 Custom stripped heterojunction devices
ReS2/ReSe2 heterojunction Disulfide bond modification Silicon nitride film CVD-graphene
Boron nitride film MoS2 / WS2 / hBN / Graphene heterojunction MX2 / MX2 / hBN / graphene heterojunction MX2 / hBN heterojunction
MX2 / graphene heterojunction ReSe2 thin film Tin diselenide SnSe2 film Antimony telluride Sb2Te3 film
Bi2Te3 thin film Bi2Se3 thin film Tin disulfide SnS2 film MoSe2 film
MoTe2 film NiTe2 film Rhenium disulfide ReS2 film WS2 film
WSe2 film PdSe2 film MoS2 film PtSe2 film
price
500元    501-1000元    1001-2000元    2000元以上

Photo ID/CAS Item ID Name/specification price

CVD molybdenum diselenide: MoSe2 isolated grains continuous film BK2020073001
  CVD molybdenum diselenide: MoSe2 isolated grains continuous film
BK2020073001-19 连续薄膜TEM铜网
BK2020073001-18 连续薄膜GaAs砷化镓
BK2020073001-17 连续薄膜铜膜
BK2020073001-16 连续薄膜银膜
BK2020073001-15 连续薄膜金膜
BK2020073001-14 连续薄膜ITO
BK2020073001-13 连续薄膜玻璃
BK2020073001-12 连续薄膜SrTiO3钛酸锶
BK2020073001-11 连续薄膜云母
BK2020073001-10 连续薄膜PDMS
BK2020073001-09 连续薄膜SOI
BK2020073001-08 连续薄膜高阻本征硅（>10000ohm.cm）太赫兹专用
BK2020073001-07 连续薄膜硅片
BK2020073001-06 连续薄膜柔性PET
BK2020073001-05 连续薄膜光学石英
BK2020073001-04 连续薄膜蓝宝石（双面抛光）
BK2020073001-03 连续薄膜蓝宝石（单面抛光）
BK2020073001-02 连续薄膜SiO2/Si（其他厚度）
BK2020073001-01 连续薄膜SiO2/Si（300nm氧化层）
$ 294
CVD molybdenum diselenide: MoSe2 Isolated grain BK2020072902
  CVD molybdenum diselenide: MoSe2 Isolated grain
BK2020072902-19 TEM铜网
BK2020072902-18 GaAs砷化镓
BK2020072902-17 铜膜
BK2020072902-16 银膜
BK2020072902-15 金膜
BK2020072902-14 ITO
BK2020072902-13 玻璃
BK2020072902-12 SrTiO3钛酸锶
BK2020072902-11 云母
BK2020072902-10 PDMS
BK2020072902-09 SOI
BK2020072902-08 高阻本征硅（>10000ohm.cm）太赫兹专用
BK2020072902-07 硅片
BK2020072902-06 柔性PET
BK2020072902-05 光学石英
BK2020072902-04 蓝宝石（双面抛光）
BK2020072902-03 蓝宝石（单面抛光）
BK2020072902-02 SiO2/Si(其他厚度）
BK2020072902-01 SiO2/Si(300nm氧化层）
$ 294
MoSe2/MoSe2 corner heterojunction BK2020070307
  MoSe2/MoSe2 corner heterojunction
BK2020070307-01 1片10*10mm
$ 1500
WSe2/MoSe2 corner heterojunction BK2020070308
  WSe2/MoSe2 corner heterojunction
BK2020070308-01 1片
$ 1650
MoS2/MoSe2 corner heterojunction BK2020070301
  MoS2/MoSe2 corner heterojunction
BK2020070301-01 1片10*10mm
$ 1060
MoSe2 based on TEM copper network substrate oxide thickness 300nm BKTMDC123132
  MoSe2 based on TEM copper network substrate oxide thickness 300nm
BKTMDC123132-02 连续薄膜10mm*10mm
BKTMDC123132-01 孤立晶粒10mm*10mm
$ 865
MoSe2 based on GaAs substrate BKTMDC123133
  MoSe2 based on GaAs substrate
BKTMDC123133-02 连续薄膜10mm*10mm
BKTMDC123133-01 孤立晶粒10mm*10mm
$ 865
MoSe2 based on copper substrate BKTMDC123134
  MoSe2 based on copper substrate
BKTMDC123134-02 连续薄膜10mm*10mm
BKTMDC123134-01 孤立晶粒10mm*10mm
$ 810
MoSe2 based on silversubstrate BKTMDC123135
  MoSe2 based on silversubstrate
BKTMDC123135-02 连续薄膜 10mm*10mm
BKTMDC123135-01 孤立晶粒10mm*10mm
$ 735
MoSe2 based on gold substrate BKTMDC123136
  MoSe2 based on gold substrate
BKTMDC123136-02 连续薄膜10mm*10mm
BKTMDC123136-01 孤立晶粒10mm*10mm
$ 840
MoSe2 based on high-resistance intrinsic Si substrate oxide thickness 300nm BKTMDC123137
  MoSe2 based on high-resistance intrinsic Si substrate oxide thickness 300nm
BKTMDC123137-02 连续薄膜10mm*10mm
BKTMDC123137-01 孤立晶粒10mm*10mm
$ 827
MoSe2 based on SrTiO3 substrate BKTMDC123138
  MoSe2 based on SrTiO3 substrate
BKTMDC123138-02 连续薄膜10mm*10mm
BKTMDC123138-01 孤立晶粒10mm*10mm
$ 827
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