Device structure: Gold electrode/ReSe2/300nmSiO2/Si back gate FET
ReSe2, few layers (~3 layers, ~5 layers), multiple layers ~10 layers
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Item ID | CAS | ID | Pack | Parameter | Stock | Make up | Price |
BK202206203 | BK202206203 | 一片装 | 100 | $750 |
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