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position： home > Product > Two-dimensional material micro-nano processing - in situ testing> Monocrystalline silicon substrate

Two-dimensional material micro-nano processing - in situ testing
Two dimensional material transfer system Heterojunction customization Customized wafer consumables Micro and nano devices
Electrode customization Transient absorption spectrum Monocrystalline silicon substrate GaN wafer
FET devices Two-dimensional material device Design and processing Photoelectric comprehensive test system
Photocurrent test system Spectrum test system
price
500元    501-1000元    1001-2000元    2000元以上

Photo ID/CAS Item ID Name/specification price

2 inch intrinsic silicon wafer BK2020042501
  2 inch intrinsic silicon wafer
BK2020042501-63 单抛本征 76.2mm>5000Ω·cm 300μm
BK2020042501-62 单抛本征 76.2mm>5000Ω·cm 300μm
BK2020042501-61 双抛本征 50.8mm>2500Ω·cm 1000μm
BK2020042501-60 双抛本征 50.8mm>3000Ω·cm 470μm
BK2020042501-59 双抛本征 50.8mm>2000Ω·cm 2000μm
BK2020042501-58 单抛本征 50.8mm>5000Ω·cm 1000μm
BK2020042501-57 单抛本征 50.8mm>1000Ω·cm 400μm
BK2020042501-56 单抛本征 50.8mm>3000Ω·cm 500μm
$ 52
4 inch intrinsic silicon wafer BK2020042502
  4 inch intrinsic silicon wafer
BK2020042502-55 双抛本征 100mm>5000Ω·cm 480μm
BK2020042502-54 单抛本征 100mm>4000Ω·cm 200μm
BK2020042502-53 单抛本征 100mm>4000Ω·cm 500μm
BK2020042502-52 单抛本征 100mm>5000Ω·cm 500μm
BK2020042502-51 单抛本征 100mm>2000Ω·cm 500μm
BK2020042502-50 单抛本征 100mm>3000Ω·cm 1000μm
$ 95
4 inch silicon dioxide wafer2 BK2020042503
  4 inch silicon dioxide wafer2
BK2020042503-49 P<100> 单氧0.01-0.05Ω·cm 500h 2000nm
BK2020042503-48 P<100> 双氧0.01-0.05Ω·cm 500h 2000nm
BK2020042503-47 P<100> 单氧0.001-0.005Ω·cm 500h 1000nm
BK2020042503-46 P<100> 双氧1--10Ω·cm 500h 1000nm
BK2020042503-45 P<100> 单氧1--10Ω·cm 525h 500nm
BK2020042503-44 P<100> 双氧1--10Ω·cm 525h 500nm
BK2020042503-43 P<100> 双氧0.002--0.004Ω·cm 500h 300nm
$ 85
4 inch silicon dioxide wafer1 BK2020042504
  4 inch silicon dioxide wafer1
BK2020042504-42 P<100> 单氧0.001--0.005Ω·cm 500h 300nm
BK2020042504-41 P<100> 双氧0.001--0.005Ω·cm 500h 300nm
BK2020042504-40 P<100> 双氧>5000Ω·cm 500h 300nm
BK2020042504-39 P<100> 双氧1--10Ω·cm 525h 300nm
BK2020042504-38 P<100> 单氧1--10Ω·cm 500h 300nm
BK2020042504-37 P<100> 单氧0.001--0.005Ω·cm 500h 285nm
BK2020042504-36 P<100> 双氧0.001--0.005Ω·cm 500h 285nm
BK2020042504-35 P<100> 双氧1--10Ω·cm 525h 285nm
BK2020042504-34 P<100> 单氧1--10Ω·cm 500h 285nm
BK2020042504-33 P<100> 双氧1--10Ω·cm 525h 200nm
BK2020042504-32 P<100> 双氧0.001--0.005Ω·cm 525h 200nm
BK2020042504-31 P<100> 双氧1--10Ω·cm 500h 200nm
BK2020042504-30 P<100> 单氧0.001--0.005Ω·cm 525h 200nm
BK2020042504-29 P<100> 单氧1--10Ω·cm 525h 200nm
BK2020042504-28 P<100> 双氧1--10Ω·cm 525h 100nm
BK2020042504-27 P<100> 单氧1--10Ω·cm 525h 100nm
BK2020042504-26 P<100> 单氧0.001--0.005Ω·cm 525h 100nm
BK2020042504-25 P<100> 单氧1--10Ω·cm 500h 50nm
BK2020042504-24 P<100> 单氧0.001-0.005Ω·cm 500h 20nm
$ 85
6 inch single crystal silicon wafer1 BK2020042505
  6 inch single crystal silicon wafer1
BK2020042505-23 二氧化硅P 100 0.001-0.005Ω·cm 500μm
BK2020042505-22 二氧化硅P 100 0.001-0.005Ω·cm 500μm
BK2020042505-21 二氧化硅P 100 1--10Ω·cm 675μm
$ 125
6 inch single crystal silicon wafer BK2020042506
  6 inch single crystal silicon wafer
BK20200425-22 二氧化硅P 100 0.001-0.005Ω·cm 500μm
BK20200425-21 二氧化硅P 100 1--10Ω·cm 675μm
BK2020042506-20 双抛P 100 1--50Ω·cm 450μm
BK2020042506-19 双抛P 100 <0.0015Ω·cm 1000μm
BK2020042506-18 双抛P 100 0--20Ω·cm 650μm
BK2020042506-17 双抛P 100 0--20Ω·cm 550μm
BK2020042506-16 双抛N 100 <1Ω·cm 340μm
BK2020042506-15 单抛区熔本征 100 630--1200Ω·cm 675μm
BK2020042506-14 单抛P 100 1--50Ω·cm 675μm
BK2020042506-13 单抛N 100 0.8--2Ω·cm 675μm
BK2020042506-12 单抛P 100 1--100Ω·cm 610-640μm
BK2020042506-11 单抛N 111 10--50Ω·cm 500μm
BK2020042506-10 单抛N 111 >10Ω·cm 1000μm
BK2020042506-09 单抛N 100 1--10Ω·cm 675μm
BK2020042506-08 单抛P 100 0.001--0.009Ω·cm 525μm
BK2020042506-07 单抛P 100 0.001-0.009Ω·cm 500μm
BK2020042506-06 单抛P 100 10--20Ω·cm 650μm
BK2020042506-05 单抛P 100 1--10Ω·cm 650μm
BK2020042506-04 单抛P 100 0.001--0.009Ω·cm 650μm
BK2020042506-03 单抛P 100 >1Ω·cm 650μm
$ 47
4 inch single crystal silicon wafer 2 BK2020042400
  4 inch single crystal silicon wafer 2
BK20200424-42 双抛N 111 10--25Ω·cm 470μm
BK20200424-41 双抛N 100 10--20Ω·cm 200μm
BK2020042400-40 双抛N 100 20--30Ω·cm 470μm
BK2020042400-39 双抛N 100 >1Ω·cm 500μm
BK2020042400-38 双抛N 100 0.001--0.009Ω·cm 525μm
BK2020042400-37 双抛P 100 1--10Ω·cm 2000μm
BK2020042400-36 双抛P 100 <0.0015Ω·cm 3000μm
BK2020042400-35 双抛P 100 1--10Ω·cm 160μm
BK2020042400-34 双抛P 100 0.01--0.02Ω·cm 200μm
BK2020042400-33 双抛P 100 1--10Ω·cm 200μm
BK2020042400-32 双抛P 100 >1Ω·cm 400μm
BK2020042400-31 双抛P 100 >10Ω·cm 500μm
BK2020042400-30 双抛P 100 0.001--0.005Ω·cm 470μm
BK2020042400-29 单抛P 111 0.01--0.015Ω·cm 525μm
BK2020042400-28 单抛P 111 8--13Ω·cm 400μm
BK2020042400-27 单抛P 100 <0.0015Ω·cm 240μm
BK2020042400-26 单抛P 100 1--20Ω·cm 525μm
BK2020042400-25 单抛P 100 20--50Ω·cm 525μm
BK2020042400-24 单抛P 100 1--5Ω·cm 240μm
BK2020042400-23 单抛P 100 1--10Ω·cm 200μm
$ 42
4 inch single crystal silicon wafer1 BK2020042411
  4 inch single crystal silicon wafer1
BK20200424-24 单抛P 100 20--50Ω·cm 525μm
BK20200424-23 单抛P 100 1--5Ω·cm 240μm
BK20200424-22 单抛P 100 1--10Ω·cm 200μm
BK20200424-21 单抛P 100 0.1--0.5Ω·cm 500μm
BK2020042411-20 单抛P 100 0.01--0.05Ω·cm 500μm
BK2020042411-19 单抛P 100 0.001--0.005Ω·cm 500μm
BK2020042411-18 单抛P 100 0.001--0.005Ω·cm 375μm
BK2020042411-17 单抛P 100 0.1--0.9Ω·cm 500μm
BK2020042411-16 单抛P 100 <0.0015Ω·cm 3000μm
BK2020042411-15 单抛P 100 0.01--0.02Ω·cm 2000μm
BK2020042411-14 单抛P 100 0.001--0.009Ω·cm 1000μm
BK2020042411-13 单抛P 110 1-10Ω·cm 500μm
BK2020042411-12 单抛N 111 0.002-0.003Ω·cm 550μm
BK2020042411-11 单抛N 111 10--25Ω·cm 500μm
BK2020042411-10 单抛N 111 20--60Ω·cm 500μm
BK2020042411-09 单抛N 111 10--25Ω·cm 400μm
BK2020042411-08 单抛N 100 3.6--5.1Ω·cm 1000μm
BK2020042411-07 单抛N 100 14--16Ω·cm 350μm
BK2020042411-06 单抛N 100 1--20Ω·cm 525μm
BK2020042411-05 单抛N 100 5--15Ω·cm 400μm
$ 32
2 inch single crystal silicon wafer BK2020042300
  2 inch single crystal silicon wafer
BK20200423-35 双抛P 100 0.01--0.05Ω·cm 650μm
BK20200423-34 双抛P 111 3--6Ω·cm 300μm
BK20200423-33 双抛N 100 1--10Ω·cm 270μm
BK20200423-32 双抛P 110 1--10Ω·cm 450μm
BK20200423-31 单抛P 100 0.01-0.05Ω·cm 270μm
BK20200423-34 单抛P 100 0.01-0.05Ω·cm 400μm
BK20200423-33 单抛P 100 0.01-0.05Ω·cm 500μm
BK20200423-32 单抛P 100 0.01-0.05Ω·cm 200μm
BK20200423-31 单抛P 100 1--10Ω·cm 500μm
BK2020042300-30 单抛P 100 0.1-0.2Ω·cm 300μm
BK2020042300-29 单抛P 100 0.01-0.05Ω·cm 300μm
BK2020042300-28 单抛P 100 1--10Ω·cm 300μm
BK2020042300-27 单抛P 100 0.01-0.05Ω·cm 5000μm
BK2020042300-26 单抛P 100 0.01-0.05Ω·cm 3000μm
BK2020042300-25 单抛P 100 <0.01Ω·cm 2000μm
BK2020042300-24 单抛P 100 1--10Ω·cm 2000μm
BK2020042300-23 单抛P 100 <0.0015Ω·cm 1000μm
BK2020042300-22 单抛P 111 1--10Ω·cm 100μm
BK2020042300-21 单抛P 111 1--10Ω·cm 280μm
BK2020042300-20 单抛P 111 <0.0015Ω·cm 350μm
$ 16
1 inch single crystal silicon wafer BK2020042311
  1 inch single crystal silicon wafer
BK2020042311-10 单抛P 100 1--10Ω·cm 500μm
BK2020042311-09 本征双抛P 100 >3000Ω·cm 470μm
BK2020042311-08 本征双抛100 >1000Ω·cm 2000μm
BK2020042311-07 双抛P 100 1--20Ω·cm 400μm
BK2020042311-06 双抛P 100 1--20Ω·cm 1900μm
BK2020042311-05 单抛P 100 <0.0015Ω·cm 400
BK2020042311-04 单抛P 100 1--20Ω·cm 1950μm
BK2020042311-03 单抛P 100 <0.01Ω·cm 1000μm
BK2020042311-02 双抛P 100 1--20Ω·cm 100μm
BK2020042311-01 单抛本征P 100 >4000Ω·cm 500μm
$ 16
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