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position： home > Product > Two-dimensional material micro-nano processing - in situ testing> GaN wafer

Two-dimensional material micro-nano processing - in situ testing
Two dimensional material transfer system Heterojunction customization Customized wafer consumables Micro and nano devices
Electrode customization Transient absorption spectrum Monocrystalline silicon substrate GaN wafer
FET devices Two-dimensional material device Design and processing Photoelectric comprehensive test system
Photocurrent test system Spectrum test system
price
500元    501-1000元    1001-2000元    2000元以上

Photo ID/CAS Item ID Name/specification price

2 inch aluminum nitride thick film wafer BK2020081715
  2 inch aluminum nitride thick film wafer
BK2020081715-08 双抛厚度：[4,5)μm
BK2020081715-07 双抛厚度：[3,4)μm
BK2020081715-06 双抛厚度：[2,3)μm
BK2020081715-05 双抛厚度：[1,2)μm
BK2020081715-04 单抛厚度：[4,5)μm
BK2020081715-03 单抛厚度：[3,4)μm
BK2020081715-02 单抛厚度：[2,3)μm
BK2020081715-01 单抛厚度：[1,2)μm
$ 500
2-inch GaN thick film wafer (Mg doped) BK2020081714
  2-inch GaN thick film wafer (Mg doped)
BK2020081714-02 双抛4.5±0.5μm
BK2020081714-01 单抛4.5±0.5μm
$ 180
2-inch GaN thick film wafer (Si doped) BK2020081713
  2-inch GaN thick film wafer (Si doped)
BK2020081713-04 双抛20±2μm
BK2020081713-03 双抛4.5±0.5μm
BK2020081713-02 单抛20±2μm
BK2020081713-01 单抛4.5±0.5μm
$ 140
2-inch GaN thick film wafer (undoped) BK2020081712
  2-inch GaN thick film wafer (undoped)
BK2020081712-04 双抛20±2μm
BK2020081712-03 双抛4.5±0.5μm
BK2020081712-02 单抛20±2μm
BK2020081712-01 单抛4.5±0.5μm
$ 120
4-inch GaN thick film wafer (Si doped) BK2020081711
  4-inch GaN thick film wafer (Si doped)
BK2020081711-02 20±2μm
BK2020081711-01 4.5±0.5μm
$ 660
4-inch GaN thick film wafer (undoped) BK2020081710
  4-inch GaN thick film wafer (undoped)
BK2020081710-02 20±2μm
BK2020081710-01 4.5±0.5μm
$ 660
Non-polar/semi-polar GaN self-supporting substrate (SP surface) BK2020081709
  Non-polar/semi-polar GaN self-supporting substrate (SP surface)
BK2020081709-04 Semi-insulating5*20.5mm2
BK2020081709-03 Semi-insulating5*10.5mm2
BK2020081709-02 Un-doped5*20.5mm2
BK2020081709-01 Un-doped5*10.5mm2
$ 600
Non-polar/semi-polar GaN free-standing substrate (M side) BK2020081708
  Non-polar/semi-polar GaN free-standing substrate (M side)
BK2020081708-04 Semi-insulating5*20.5mm2
BK2020081708-03 Semi-insulating5*10.5mm2
BK2020081708-02 Un-doped5*20.5mm2
BK2020081708-01 Un-doped5*10.5mm2
$ 600
Non-polar/semi-polar GaN free-standing substrate (A side) BK2020081707
  Non-polar/semi-polar GaN free-standing substrate (A side)
BK2020081707-04 Semi-insulating5*20.5mm2
BK2020081707-03 Semi-insulating5*10.5mm2
BK2020081707-02 Un-doped5*20.5mm2
BK2020081707-01 Un-doped5*10.5mm2
$ 600
10×10.5mm2 GaN self-supporting wafer (Fe doped) BK2020081706
  10×10.5mm2 GaN self-supporting wafer (Fe doped)
BK2020081706-09 Double-抛光位错密度：1~5 x 105 cm-2
BK2020081706-08 Double-抛光位错密度：5~9 x 105 cm-2
BK2020081706-07 Double-抛光位错密度：1~3 x 106 cm-2
BK2020081706-06 N-抛光位错密度：1~5 x 105 cm-2
BK2020081706-05 N-抛光位错密度：5~9 x 105 cm-2
BK2020081706-04 N-抛光位错密度：1~3 x 106 cm-2
BK2020081706-03 Ga-抛光位错密度：1~5 x 105 cm-2
BK2020081706-02 Ga-抛光位错密度：5~9 x 105 cm-2
BK2020081706-01 Ga-抛光位错密度：1~3 x 106 cm-2
$ 390
10×10.5mm2 GaN self-supporting wafer (Si doped) BK2020081705
  10×10.5mm2 GaN self-supporting wafer (Si doped)
BK2020081705-09 Double-抛光位错密度：1~5 x 105 cm-2
BK2020081705-08 Double-抛光位错密度：5~9 x 105 cm-2
BK2020081705-07 Double-抛光位错密度：1~3 x 106 cm-2
BK2020081705-06 N-抛光位错密度：1~5 x 105 cm-2
BK2020081705-05 N-抛光位错密度：5~9 x 105 cm-2
BK2020081705-04 N-抛光位错密度：1~3 x 106 cm-2
BK2020081705-03 Ga-抛光位错密度：1~5 x 105 cm-2
BK2020081705-02 Ga-抛光位错密度：5~9 x 105 cm-2
BK2020081705-01 Ga-抛光位错密度：1~3 x 106 cm-2
$ 390
10×10.5mm2 GaN self-supporting wafer (non-doped) BK2020081704
  10×10.5mm2 GaN self-supporting wafer (non-doped)
BK2020081704-09 Double-抛光位错密度：1~5 x 105 cm-2
BK2020081704-08 Double-抛光位错密度：5~9 x 105 cm-2
BK2020081704-07 Double-抛光位错密度：1~3 x 106 cm-2
BK2020081704-06 N-抛光位错密度：1~5 x 105 cm-2
BK2020081704-05 N-抛光位错密度：5~9 x 105 cm-2
BK2020081704-04 N-抛光位错密度：1~3 x 106 cm-2
BK2020081704-03 Ga-抛光位错密度：1~5 x 105 cm-2
BK2020081704-02 Ga-抛光位错密度：5~9 x 105 cm-2
BK2020081704-01 Ga-抛光位错密度：1~3 x 106 cm-2
$ 300
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