Synchrotron radiation / SEM silicon nitride film pane

20205291790792.pdf





ID：BK2020042701

CAS：

price：
Inquiry


Item ID：BK2020042701-29

specification：

5 minutes to choose the product plan

E-mail：mxenes@163.com

Detailed

In order to meet the observation needs of scientific researchers on samples, we have adopted advanced microelectronics technology to design and manufacture standard silicon nitride film panes specifically for synchrotron radiation stations and scanning electron microscopes (SEM). Our silicon nitride film panes have the characteristics of high cleanliness, high X-ray transmission, low stress, high strength and uniform film thickness. They are suitable for high temperature (~ 1000 ℃) experiments and different pressure environments. At present, our products have been widely recognized by scientific researchers around the world and used in the research of biology, materials, physics, chemistry and other aspects.

Product features
Ultra clean
100-level clean environment
strictly selects silicon substrate materials.
Advanced process level
High strength
Thin film stress <250Mpa The
thinnest film can be up to 10nm
Window size can be up to 2cm
Ultra-flat
roughness less than 0.5nm
Uniformity is better than 5%
physical and chemical excelling
acid (excluding hydrofluoric acid), alkali resistance, organic solvent,
easy to clean using a plasma
X-ray transmission rate

Technical Parameters

Outer frame items	parameter	Outer frame items	parameter
material	N -type silicon	Resistivity	1 ~ 10 Ω-cm
Silicon nitride film parameters	parameter	Silicon nitride film parameters	parameter
material	LPCVD silicon nitride film	stress	<250MPa
Dielectric constant	6 -7	Dielectric strength	10 (10 6 V / cm)
Resistivity	10 16 Ω-cm	Roughness (Ra)	0.28 ± 5% nm
Refractive index @ 630nm	2.15-2.17	Roughness (Rms)	0.40 ± 5% nm

Application range

Nano materials, semiconductor materials, optical crystal materials, functional thin film materials

Characterization experiments of colloids, aerogels, organic materials and nanoparticles

Analysis of carbon-containing samples (photoresist, polymer, food, oil, fuel, etc.)

As a biological and cellular carrier

Product specification

This pane provides three different frame sizes (5mm, 7.5mm, 10mm) for selection. The thickness of the silicon substrate is 200μm.

Product ID	Film thickness	Window size	Frame size
TE025Z	10nm	0.25x0.25mm	5x5mm
TE050Z	10nm	0.5x0.5mm	5x5mm
TE025Y	20nm	0.25x0.25mm	5x5mm
TE050Y	20nm	0.5x0.5mm	5x5mm
TE025A	30nm	0.25x0.25mm	5x5mm
TE050A	30nm	0.5x0.5mm	5x5mm
TE100A	30nm	1x1mm	5x5mm
TE025B	50nm	0.25x0.25mm	5x5mm
TE050B	50nm	0.5x0.5mm	5x5mm
TE100B	50nm	1x1mm	5x5mm
TE150B	50nm	1.5x1.5mm	5x5mm
TE200B	50nm	2x2mm	5x5mm
TE025C	100nm	0.25x0.25mm	5x5mm
TE050C	100nm	0.5x0.5mm	5x5mm
TE100C	100nm	1x1mm	5x5mm
TE150C	100nm	1.5x1.5mm	5x5mm
TE200C	100nm	2x2mm	5x5mm
TE75050C	100nm	0.5x0.5mm	7.5x7.5mm
TE75200C	100nm	2x2mm	7.5x7.5mm
TE100300C (5pcs)	100nm	3x3mm	10x10mm
TE100500C (5pcs)	100nm	5x5mm	10x10mm
TE010D	200nm	0.1x0.1mm	5x5mm
TE025D	200nm	0.25x0.25mm	5x5mm
TE050D	200nm	0.5x0.5mm	5x5mm
TE100D	200nm	1x1mm	5x5mm
TE150D	200nm	1.5x1.5mm	5x5mm
TE200D	200nm	2x2mm	5x5mm
TE250D	200nm	2.5x2.5mm	5x5mm
Each box contains 10 chips (except some products)

Warm tip: the products supplied by Beijing Beike Xincai Technology Co., Ltd. are only used for scientific research, not for human body

Item ID	CAS	ID	Pack	Parameter	Stock	Make up	Price
BK2020042701-21		BK2020042701	TE100300C(5pcs)	3x3mm	100		$0
BK2020042701-22		BK2020042701	TE100500C(5pcs)	5x5mm	100		$0
BK2020042701-23		BK2020042701	TE010D	0.1x0.1mm	100		$0
BK2020042701-24		BK2020042701	TE025D	0.25x0.25mm	100		$0
BK2020042701-25		BK2020042701	TE050D	0.5x0.5mm	100		$0
BK2020042701-26		BK2020042701	TE100D	1x1mm	100		$0
BK2020042701-27		BK2020042701	TE150D	1.5x1.5mm	100		$0
BK2020042701-28		BK2020042701	TE200D	2x2mm	100		$0
BK2020042701-29		BK2020042701	TE250D	2.5x2.5mm	100		$0

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