MXene Ti3C2 Nb2C V2C MOF Nb2C Two dimensional materials

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Two-dimensional material micro-nano processing - in situ testing

Two dimensional material transfer system	Heterojunction customization	Customized wafer consumables	Micro and nano devices
Electrode customization	Transient absorption spectrum	Monocrystalline silicon substrate	GaN wafer
FET devices	Two-dimensional material device	Design and processing	Photoelectric comprehensive test system
Photocurrent test system	Spectrum test system

price

500元 501-1000元 1001-2000元 2000元以上

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ID/CAS

Item ID

Name/specification

price

BK2022051002

$ 225

BK2022051001

	Mechanical exfoliation of monolayer graphene
BK2022051001-04	1片装单层尺寸：大于30μm
BK2022051001-03	1片装单层尺寸：30μm
BK2022051001-02	1片装单层尺寸：20μm
BK2022051001-01	1片装单层尺寸：10μm

$ 112

BK2022050908

	Mechanical exfoliation of monolayer MoS2
BK2022050909-07	UV-VIS吸收光谱原始数据
BK2022050909-06	PL mapping原始数据
BK2022050909-05	PL原始数据
BK2022050909-04	拉曼Mapping原始数据
BK2022050909-03	拉晏原始数据
BK2022050909-02	机械剥离少层材料
BK2022050909-01	机械剥高单层材料

$ 450

BK2022050907

	Mechanical exfoliation of monolayer MoSe2
BK2022050907-07	UV-VIS吸收光谱原始数据
BK2022050907-06	PL mapping原始数据
BK2022050907-05	PL原始数据
BK2022050907-04	拉曼Mapping原始数据
BK2022050907-03	拉晏原始数据
BK2022050907-02	机械剥离少层材料
BK2022050907-01	机械剥高单层材料

$ 450

BK2022050906

	Mechanical exfoliation of monolayer WSe2
BK2022050906-07	UV-VIS吸收光谱原始数据
BK2022050906-06	PL mapping原始数据
BK2022050906-05	PL原始数据
BK2022050906-04	拉曼Mapping原始数据
BK2022050906-03	拉晏原始数据
BK2022050906-02	机械剥离少层材料
BK2022050906-01	机械剥高单层材料

$ 450

	Mechanical peeling of single layer WS2
BK2022050906	1片

$ 450

BK2022050905

	Graphene transistors, GFETs
BK2022050905	1cm*1cm

$ 562

BK2022050902

	Molybdenum disulfide FET, MoS2 FET
BK2022050902	1片装1 cm*1cm，SiO2/Si基底

$ 2062

BK2022050901

	Tungsten Disulfide FET, WS2 FET
BK2022050901	1片装1cm*1cm ;SiO2/Si基底

$ 2062

BK2022050901

	Tungsten Diselenide FET, WSe2 FET
BK2022050901	1片装1cm*1cm SiO2/Si基底

$ 2062

BK2022050701

	BP FET Black Phosphorus FET, Mechanically Stripped Black Phosphorus Transistor
BK2022050701-04	Raman测试数据
BK2022050701-03	转移特性测试数据
BK2022050701-02	IV测试数据
BK2022050701-01	黑磷FET+金电极

$ 562

BK2022050606

	Single-layer 2H MoTe2 FET device
BK2022050606-05	1片装转移曲线原始数据测试
BK2022050606-04	1片装IV原始数据测试
BK2022050606-03	1片装Raman原始数据测试
BK2022050606-02	1片装单层MoTe2 FET
BK2022050606-01	1片装不带电极剥离单层MoTe2

$ 450